| Parameters(19) | Default | Remark |
| M_CGS |
5nF |
|
| M_CGD |
250pF |
|
| M_CDS |
750pF |
|
| M_KP[A/V2] |
46 |
Transconductance |
| M_RG |
3.2 |
Internal Gate Resistance [Ohm] |
| M_Rpackage[Ohm] |
1m |
On state Drain-Source Resistance becuase of packaging, lead and epi layers |
| M_BVdss |
40 |
Breakdown voltage[V] |
| M_VGSth[V] |
3.6 |
Gate-source Threshold voltage |
| D_TT |
0 |
Forward storage time (Transit Time) |
| D_TRR |
50n |
Reverse Recovery Time [s] |
| D_SnapOffTimeconstant |
25n |
Time delay for the reverse recovery current |
| D_Rs |
2m |
Series parasitic resistance of the diode |
| D_QRR |
30n |
Reverse Recovered Charge |
| D_N |
1 |
Emission Coefficient |
| D_Is |
2e-8 |
Saturation Current |
| D_IF |
100 |
Forward current before Reverse Recovery |
| D_DIFDT |
100e6 |
Reverse Recovery slope of turn off current |
| D_BV |
1e6 |
Reverse Breakdown voltage |
| D_Cj0 |
1n |
Junction capacitance |
