IGBTModule - IGBT Module
Connection Diagram:
C | ||
GH | EC | |
GL | JUNCTION | |
M | ||
E |
Connections(7) | Position | Remark |
M | Left | |
JUNCTION | Right | Thermal Junction Node |
GL | Left | Lower IGBT gate |
GH | Left | Upper IGBT gate |
EC | Right | Output |
E | Bottom | |
C | Top | Collector |
Parameters(10) | Default | Remark |
Ton | 1100n | |
Toff | 1100n | |
IGBT_Rce_25Degr. | 4m | |
IGBT_Rce_125Degr. | 6.3m | |
Diode_Ron_125Degr. | 6.5m | |
Diode_Ron_25Degr. | 4.5m | |
IGBT_Vce_125Degr. | 0.9 | |
IGBT_Vce_25Degr. | 1 | |
Diode_Vto_25Degr. | 2 | |
Diode_Vto_125Degr. | 1.8 |
Function | IGBT module with two IGBTs wiith Diodes. The losses calculated in the IGBT during turn on, turn off and the losses in the diodes during reverse recovery are calculated. The power loss is available on the thermal node TJ(T-Junction). | |
Special | The losses are estimete based on the turn-on time ton and turn-off time toff. To use the parameters Eon/Eoff instead, calculate ton from Eon and toff from Eoff. Eon and Eoff are specified for Vmax and Imax. ton=6*Eon/(Vmax*Imax) toff=6*Eoff/(Vmax*Imax) Junction is the thermal node where to connect the thermal model of the case and heatsink |
Status | Standard |
Select from | Components\Library\Semiconductor\IGBT |
See also
IGBT, IGBTLEVEL0, IGBTLevel1, IGBTLEVEL2, IGBTMODULE10, IGBTModule4, IGBTModule4x,