| Parameters(20) | Default | Remark |
| Eon/Eoff_Inom |
100 |
Nominal current for Eon and Eoff specification |
| Eon/Eoff_Vnom |
600 |
Nominal voltage for Eon and Eoff specification |
| Eoff[Ws] |
10m |
Turn off switching loss [Ws], add any reverse recovery loss of the complementary device here |
| Eon[Ws] |
10m |
Turn on switching loss [Ws] |
| VTO[V] |
3 |
Threshold voltage of the gate VGS_Threshold |
| ThermalVoltageThresholdCoefficientIGBT[Ohm/Celcius] |
0.01 |
Temperature coefficient of the threshold voltage of the gate VGS_Threshold=VTO+dVTO/dT * Temperature |
| RthJC |
0.8 |
Thermal resistance Junction to Case |
| Thermal_timeconstant |
1m |
Thermal time constant |
| InitialTemperature[[Celcius] |
25 |
Initial temperature of the heat sink |
| Vce |
2 |
IGBT on state voltage Vce |
| BV |
1e6 |
BreakDown voltage of the IGBT and the diode |
| Vdiode |
0.6 |
On state diode voltage |
| Rdiode |
10m |
On state diode resistance |
| Rgate |
10 |
Mosfet internal gate resistance |
| CGE |
100nF |
Mosfet Gate Source capacitance |
| Rce |
100m |
On state IGBT Rce resistance |
| ThermalconductionCoefficientDiode[Ohm/Celcius] |
0.7 |
On resistance temperature coefficient |
| ThermalVoltageCoefficientDiode[Volt/Celcius] |
-2m |
Voltage temperature coefficient |
| ThermalVoltageCoefficientIGBT[Volt/Celcius] |
-2m |
Voltage temperature coefficient |
| ThermalconductionCoefficientIGBT[Ohm/Celcius] |
0.7 |
On resistance temperature coefficient |
