| Parameters(29) | Default | Remark |
| BV |
1e6 |
Diode Reverse Break down voltage[V] |
| DIFDT |
190e6 |
Slope of reverse recovery current [A/s] |
| IF |
4 |
Forward Current before reverse recovery [A] |
| Is |
1e-12 |
Saturation Current |
| N |
1.5 |
Emission Coefficient |
| Qrr |
80m |
Reverse Recovery Charge[C] |
| Rs |
1m |
Series parasitic resistance of the diode |
| tau_rr |
20n |
Time delay for the reverse recovery current |
| Trr |
42n |
Reverse Recovery Time [s] |
| TT |
0 |
Forward storage time (Transit Time) |
| FC |
0.5 |
|
| KP |
0.6 |
|
| CGS |
1n |
|
| CGD |
1n |
|
| CDS |
3n |
|
| LD |
10n |
|
| VTO |
4.5 |
|
| VJ |
1 |
|
| RG |
1 |
Internal Gate Resistance [Ohm] |
| RD |
50m |
|
| M |
0.5 |
|
| LS |
12nH |
|
| LG |
5nH |
|
| RthJC |
0.8 |
Thermal resistance Junction to Case |
| CthJ |
1m |
Thermal Junction capacitance |
| Tth0 |
25 |
Initial temperature of the heat sink |
| ITail_over_IForward[0..1] |
0.1 |
Percentage of tail current as function of the forward current |
| TailCurrentDecayTime |
50n |
Time constant of the decay of the tail current [s] |
| VCEon |
1.72 |
Collector Emitter on voltage |
