MosfetModule - MOSFET Module
Connection Diagram:
C | ||
GH | EC | |
GL | JUNCTION | |
M | ||
E |
Connections(7) | Position | Remark |
M | Left | |
JUNCTION | Right | Thermal Junction Node |
GL | Left | Lower MOSFET gate |
GH | Left | Upper MOSFET gate |
EC | Right | Output |
E | Bottom | |
C | Top | Collector |
Parameters(10) | Default | Remark |
Ton | 1100n | |
Toff | 1100n | |
MOSFET_Rd_25Degr. | 4m | |
MOSFET_Rd_125Degr. | 6.3m | |
Diode_Ron_125Degr. | 6.5m | |
Diode_Ron_25Degr. | 4.5m | |
MOSFET_Vd_125Degr. | 0.9 | |
MOSFET_Vd_25Degr. | 1 | |
Diode_Vto_25Degr. | 2 | |
Diode_Vto_125Degr. | 1.8 |
Function | MOSFET module with two MOSFETs wiith Diodes. The losses calculated in the MOSFET during turn on, turn off and the losses in the diodes during reverse recovery are calculated. The power loss is available on the thermal node TJ(T-Junction). | |
Special | The losses are estimete based on the turn-on time ton and turn-off time toff. To use the parameters Eon/Eoff instead, calculate ton from Eon and toff from Eoff. Eon and Eoff are specified for Vmax and Imax. ton=6*Eon/(Vmax*Imax) toff=6*Eoff/(Vmax*Imax) Junction is the thermal node where to connect the thermal model of the case and heatsink |
Status | Standard |
Select from | Components\Library\Semiconductor\Mosfet |
See also
MosfetDiode, MosfetLevel0, MosfetModule4, MosfetMonitor, MosfetSensor, nMosfetLevel0, pMosfetLevel0, TrenchMosfetDiode, VDMOS,