To predict losses in power semiconductors simulation can be used. The required semiconductor model can either be a detailed dynamic model where the losses are calculated from the simulated waveforms, or a fast ideal model with loss prediction. A detailed model requires precise verified parameters and gives long simulation times. A model that can predict losses based on measurements of the switching losses of a semi-conductor improves the verification of the parameters and shortens the simulation time considerably. In this paper the two methods are discussed and samples are given for common Power Electronic semiconductor switches.

Simulation, Modeling, Power Electronics, Semiconductor Losses, Switching Losses, Loss Prediction, Reverse Recovery, Tail-current, Temperature-dependence, EMI/EMC.

To predict losses in power semiconductors simulation can be used. The required semiconductor model can either be a detailed dynamic model where the losses are calculated from the simulated waveforms, or a fast ideal model with loss prediction. A detailed model requires precise verified parameters and gives long simulation times. A model that can predict losses based on measurements of the switching losses of a semi-conductor improves the verification of the parameters and shortens the simulation time considerably. In this paper the two methods are discussed and samples are given for common Power Electronic semiconductor switches.

Simulation, Modeling, Power Electronics, Semiconductor Losses, Switching Losses, Loss Prediction, Reverse Recovery, Tail-current, Temperature-dependence, EMI/EMC.

Peter J. van Duijsen Pavol Bauer Simulation Reserarch, The Netherlands, www.caspoc.com TU Delft, The Netherlands, www.tudelft.nl

In the design process of new prototypes modeling and simulation is an excepted methodology. There are standard simulation tools available and there are numerous examples and literature about models. Even manufactures start to provide models of their produced components. In this paper we will concentrate on models for power electronics semiconductors.

In the design process of new prototypes modeling and simulation is an excepted methodology. There are standard simulation tools available and there are numerous examples and literature about models. Even manufactures start to provide models of their produced components. In this paper we will concentrate on models for power electronics semiconductors.

For realizing a three-phase 400VAC/800VDC 10kW unity power factor PWM (VIENNA) rectifier system a novel Si/SiC multi-chip power semiconductor modules (IXYS VUM26B) facilitating switching frequencies up to 500kHz is employed. Direct water cooling of the modules base plates does significantly reduce the size of the cooling system. As the heat flow is directly from the power module into the water the cooling system can be realized using non-metal heat sink what does reduce commonmode EMI emissions. In this paper it is shown how the time behavior of the power module semiconductor junction temperatures over a mains period can be calculated with high accuracy by combining simple thermal equivalent circuits and stationary thermal simulations of the cooling system. Furthermore, the determination of the switching losses by circuit simulation based on experimental data is discussed and the power transistor and power diode junction temperatures are investigated for different operating points of the rectifier system.