• Introduction
• What is in this manual
• What is Caspoc
• User interface
• Introduction
• Starting
• Simulation
• Editing
• Viewing and printing
• Getting Started
• Basic editing
• Simulation in the time domain
• Basic User Interface Topics
• Editing
• Simulation
• Viewing
• Library
• Reports
• Project management
• Circuit and Block Diagram Components
• Introduction
• Cscript and user defined functions
• Component parameters
• Modeling Topics
• Introduction
• Power Electronics
• Semiconductors
• Electrical Machines
• Electrical drives
• Advanced Electrical Drives
• Power Systems
• Mechanical Systems
• Thermal Systems
• Magnetic Circuits
• Green Energy
• Advanced user interface topics
• Coupling to FEM
• Experimenter
• Analog hardware description language
• Embedded C code Export
• Coupling to Spice
• Small Signal Analysis
• Matlab coupling
• Tips and tricks
• Appendices

## MOS Controlled Thyristor, MCT.

The MOS Controlled Thyristor (MCT)is a models that is based on the diode model. The main difference for the MCT model from the semiconductor library compared to the circuit components is the circuit connection for the gate. The ideal circuit components have a block diagram gate control node, while the models from the semiconductor library have a circuit control node.
This means that the ideal circuit components are controlled by a block diagram signal, that is either 0 or 1. The MCT from the semiconductor library is controlled from a circuit.

What model is required
When one is only interested in the overall system analysis, the ideal circuit components are sufficient. When the entire control circuit has to be modeled, the models from the semiconductor library are required.

Static characteristics
The static characteristics include the turn on and turn off parameters. The on state characteristics are defined by a forward voltage drop over the conducting MCT and a series resistance.

Dynamics
The Gate is modeled asa MOS input. This means charge has to build up in the MCT during turn-on and the charge has to be removed during turn-off. The Gate-Anode capacitance and the internal gate resistance can be defined. When the voltage over the Gate-Anode is crossing the threshold value, the device is switching. (Note, not the external Gate voltage!)

Overview of the MCT parameters
The parameters for the MCT are summarized in the following table. Default values for the parameters are given.

MCT Static Parameters
 Parameter Default Function Ron 10m On-state resistance. Roff 100k Off-state resistance. Von 1 On-state series voltage.

MCT Dynamic Gate Parameters
 Parameter Default Function CGA 1nF Gate capacitance. RG 10 Internal Gate resistance. VonGateThreshold -5 To turn-on, the Gate-Anode voltage has to be less than -5 Volts. VoffGateThreshold 5 To turn-off, the Gate-Anode voltage has to be larger than 5 Volts.

MCT Reverse Break Down Parameters
 Parameter Default Function ReverseBreakDownVoltage 25 Breakdown voltage, if the voltage accross the device is larger than BV, the device turns on. ReverseBreakDownCurrent 1 Breakdown current, if the voltage accross the device is larger than BV, the device turns on and the current is this specified value. RonBreakDown 1 Resistance during break down.

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