MosfetDiode - Dynamic Mosfet model

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Connection Diagram:

D
G CASE
MSENSOR
S

Connections(35)PositionRemark
SENSOR Right
S Bottom Source
M Left Model
G Left Gate
D Top Drain
CASE Right Thermal connection to the case

Parameters(26)DefaultRemark
Tth0 25 Initial temperature of the heat sink
CthJ 1m Thermal Junction capacitance
RthJC 0.8 Thermal resistance Junction to Case
LG 5nH
LS 12nH
M 0.5
RD 190m On state Drain-Source Resistance
RG 10 Internal Gate Resistance [Ohm]
VJ 1
VTO 3
LD 10n
CDS 730pF
CGD 50pF
CGS 2350pF
KP 6.4
FC 0.5
TT 0 Forward storage time (Transit Time)
Trr 0 Reverse Recovery Time [s]
tau_rr 0 Time delay for the reverse recovery current
Rs 1m Series parasitic resistance of the diode
Qrr 0 Reverse Recovery Charge[C]
N 1.5 Emission Coefficient
Is 1e-12 Saturation Current
IF 0 Forward Current before reverse recovery [A]
DIFDT 0 Slope of reverse recovery current [A/s]
BV 650 Diode Reverse Break down voltage[V]

Function Mosfet Dynamic model with internal diode with reverse recovery

Status Standard

Select from Components\Library\Semiconductor\Mosfet

See also
MosfetLevel0, MosfetModule, MosfetModule4, MosfetMonitor, MosfetSensor, nMosfetLevel0, pMosfetLevel0, TrenchMosfetDiode,
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