IGBTLEVEL2 - Level 2 IGBT

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Connection Diagram:

C
FILE
GTHERMAL
M
E

Connections(8)PositionRemark
THERMAL Right
M Left Connect to a .Model database
G Left
FILE Left
E Bottom
C Top

Parameters(20)DefaultRemark
Eon/Eoff_Inom 100 Nominal current for Eon and Eoff specification
Eon/Eoff_Vnom 600 Nominal voltage for Eon and Eoff specification
Eoff[Ws] 10m Turn off switching loss [Ws], add any reverse recovery loss of the complementary device here
Eon[Ws] 10m Turn on switching loss [Ws]
VTO[V] 3 Threshold voltage of the gate VGS_Threshold
ThermalVoltageThresholdCoefficientIGBT[Ohm/Celcius] 0.01 Temperature coefficient of the threshold voltage of the gate VGS_Threshold=VTO+dVTO/dT * Temperature
RthJC 0.8 Thermal resistance Junction to Case
Thermal_timeconstant 1m Thermal time constant
InitialTemperature[[Celcius] 25 Initial temperature of the heat sink
Vce 2 IGBT on state voltage Vce
BV 1e6 BreakDown voltage of the IGBT and the diode
Vdiode 0.6 On state diode voltage
Rdiode 10m On state diode resistance
Rgate 10 Mosfet internal gate resistance
CGE 100nF Mosfet Gate Source capacitance
Rce 100m On state IGBT Rce resistance
ThermalconductionCoefficientDiode[Ohm/Celcius] 0.7 On resistance temperature coefficient
ThermalVoltageCoefficientDiode[Volt/Celcius] -2m Voltage temperature coefficient
ThermalVoltageCoefficientIGBT[Volt/Celcius] -2m Voltage temperature coefficient
ThermalconductionCoefficientIGBT[Ohm/Celcius] 0.7 On resistance temperature coefficient

Function Ideal IGBT model with inverse diode and gate delay and conduction losses
Special The Gate is a circuit node. The delay time due to charging CGE is modeled,

Status Standard

Select from Components\Library\Semiconductor\IGBT

See also
IGBT, IGBTLEVEL0, IGBTLevel1, IGBTModule, IGBTMODULE10, IGBTModule4, IGBTModule4x,
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