IGBT -

preview

Connection Diagram:

D
G CASE
MSENSOR
E

Connections(38)PositionRemark
SENSOR Right
M Left Model
G Left Gate
E Bottom
D Top Drain
CASE Right Thermal connection to the case

Parameters(29)DefaultRemark
BV 1e6 Diode Reverse Break down voltage[V]
DIFDT 190e6 Slope of reverse recovery current [A/s]
IF 4 Forward Current before reverse recovery [A]
Is 1e-12 Saturation Current
N 1.5 Emission Coefficient
Qrr 80m Reverse Recovery Charge[C]
Rs 1m Series parasitic resistance of the diode
tau_rr 20n Time delay for the reverse recovery current
Trr 42n Reverse Recovery Time [s]
TT 0 Forward storage time (Transit Time)
FC 0.5
KP 0.6
CGS 1n
CGD 1n
CDS 3n
LD 10n
VTO 4.5
VJ 1
RG 1 Internal Gate Resistance [Ohm]
RD 50m
M 0.5
LS 12nH
LG 5nH
RthJC 0.8 Thermal resistance Junction to Case
CthJ 1m Thermal Junction capacitance
Tth0 25 Initial temperature of the heat sink
ITail_over_IForward[0..1] 0.1 Percentage of tail current as function of the forward current
TailCurrentDecayTime 50n Time constant of the decay of the tail current [s]
VCEon 1.72 Collector Emitter on voltage

Function

Status Standard

Select from Components\Library\Semiconductor\IGBT

See also
IGBTLEVEL0, IGBTLevel1, IGBTLEVEL2, IGBTModule, IGBTMODULE10, IGBTModule4, IGBTModule4x,
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